solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet features: ? bv ceo to 400 v ? fast switching ? very low leakage ? low saturation voltage ? 200 o c operating, gold eutectic die attach ? designed for complementary use with sft1192 sft6800/59 2 amp 500 volts npn transistor to-59 maximum ratings symbol value units collector ? emitter voltage v ceo 400 volts collector ? base voltage v cbo 500 volts emitter ? base voltage v ebo 10 volts collector current i c 2 amps base current i b 0.5 amps total device dissipation @ t c = 100 o c derate above 25 o c p d 20 133 w mw/ o c operating and storage temperature range t op & t stg -65 to +200 o c thermal resistance, junction to case r jc 7.5 o c/w note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: tr0009e doc
solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sft6800/59 electrical characteristics symbol min max units collector ? emitter breakdown voltage (i c = 20 ma) bv ceo 400 ?? ?? v collector ? base breakdown voltage (i c = 100 a dc ) bv cbo 500 ?? v emitter ? base breakdown voltage (i e = 20 a dc ) bv ebo 10 ?? v collector cutoff current (v cb = 400 v dc ) i cbo ?? 200 na collector cutoff current (v ce = 400 v dc , v eb = 1.5 v dc ) i cev ?? 200 na emitter cutoff current (v eb = 6 v dc ) i ebo ?? 200 na dc current gain* (v ce = 5 v dc ) (i c = 50 ma dc ) (i c = 500 ma dc ) (i c = 1.0 a dc ) h fe 50 40 15 ?? ?? ?? collector ? emitter saturation voltage* (i c = 500 ma dc , i b = 50 ma dc ) v ce (sat) ?? 500 mv dc base ? emitter saturation voltage* (i c = 500 ma dc , i b = 50 ma dc ) v be (sat) ?? 1.0 v dc current gain bandwidth product (i c = 50 ma dc , v ce = 10 v dc , f = 20 mhz) f t 25 ?? mhz output capacitance (v cb = 30 v dc , i e = 0 a dc , f = 2.0 mhz) c obo ?? 40 pf turn on time t (on) ?? 700 ns turn off time (v cc = 330 v dc , i c = 500 ma dc , i b1 = i b2 = 100 ma dc r b1 = r b2 = 330 ? t (off) ?? 2000 ns * pulse test: pulse width = 300 sec, duty cycle = 2% note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: tr0009e doc
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